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PBU801-PBU807
Vishay Lite-On Power Semiconductor
8.0A Bridge Rectifier
Features
D Diffused junction D Low forward voltage drop, high current
capability
D D D D
Surge overload rating to 300A peak Ideal for printed circuit board applications Case to terminal isolation voltage 2500V Plastic material - UL Recognition flammability classification 94V-0 component index, file number E95060
14 408
D This series is UL listed under recognized
Absolute Maximum Ratings
Tj = 25_C Parameter Repetitive peak reverse voltage g =Working peak reverse voltage =DC Bl ki voltage DC Blocking lt Test Conditions Type PBU801 PBU802 PBU803 PBU804 PBU805 PBU806 PBU807 Symbol VRRM =VRWM =VR V Value 50 100 200 400 600 800 1000 300 8 -65...+150 Unit V V V V V V V A A C
Peak forward surge current Average forward current TC=100C Junction and storage temperature range
IFSM IFAV Tj=Tstg
Electrical Characteristics
Tj = 25_C Parameter Forward voltage Reverse current I2t Rating for fusing Thermal resistance junction to case Test Conditions IF=2A TC=25C TC=125C mounted on heatsink Type Symbol VF IR IR I2t RthJC Min Typ Max 1 10 1 373 Unit V
mA
mA A2s K/W
7.5
Rev. A2, 24-Jun-98
1 (4)
PBU801-PBU807
Vishay Lite-On Power Semiconductor Characteristics (Tj = 25_C unless otherwise specified)
IFAV - Average Forward Current ( A ) 8
Heat Sink
1000 C D - Diode Capacitance ( pF )
Tj = 25C f = 1 MHz
6
4
100
2
Mounted on 4x4 inch Copper PC Board 12.7mm lead length
0 0
15699
50
100
150
15702
10 0.1
1
10
100
Tamb - Ambient Temperature ( C )
VR - Reverse Voltage ( V )
Figure 1. Max. Average Forward Current vs. Ambient Temperature
100
Figure 4. Typ. Diode Capacitance vs. Reverse Voltage
10 IR - Reverse Current ( m A )
IF - Forward Current ( A )
Tj = 100C
10
1.0
1.0
0.1
Tj = 25C
0.1 0.6
15700
Tj = 25C IF Pulse Width = 300 s
0.01 0.8 1.0 1.2 VF - Forward Voltage ( V )
15703
0 40 80 120 Percent of Rated Peak Reverse Voltage (%)
Figure 2. Typ. Forward Current vs. Forward Voltage
IFSM - Peak Forward Surge Current ( A ) 300 250 200 150 100 50 0 1
15701
Figure 5. Typ. Reverse Current vs. Percent of Rated Peak Reverse Voltage
Tj = 125C 8.3 ms Single Half-Sine-Wave JEDEC method
10 Number of Cycles at 60 Hz
100
Figure 3. Max. Peak Forward Surge Current vs. Number of Cycles
2 (4)
Rev. A2, 24-Jun-98
PBU801-PBU807
Vishay Lite-On Power Semiconductor Dimensions in mm
14475
Case: molded plastic Polarity: as marked on case Approx. weight: 8.0 grams Mounting position: any Mounting: through hole for #6 screw Mounting torque: 5.0 Inch-pounds maximum Marking: type number
Rev. A2, 24-Jun-98
3 (4)
PBU801-PBU807
Vishay Lite-On Power Semiconductor Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
4 (4)
Rev. A2, 24-Jun-98

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